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Title: Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

Abstract

Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivitymore » was about 9.1 × 10{sup −4} Ω cm.« less

Authors:
 [1]; ; ;  [1];  [2]
  1. School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China)
  2. School of Mechanical Engineering, University of Adelaide, SA 5005 (Australia)
Publication Date:
OSTI Identifier:
22475851
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 68; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; MAGNETRONS; NITROGEN ADDITIONS; PARTIAL PRESSURE; POLYESTERS; POSITRON COMPUTED TOMOGRAPHY; SPUTTERING; STOICHIOMETRY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIN OXIDES; VISIBLE RADIATION

Citation Formats

Fang, Feng, Zhang, Yeyu, Wu, Xiaoqin, Shao, Qiyue, Xie, Zonghan, and School of Engineering, Edith Cowan University, WA 6027. Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering. United States: N. p., 2015. Web. doi:10.1016/J.MATERRESBULL.2015.03.072.
Fang, Feng, Zhang, Yeyu, Wu, Xiaoqin, Shao, Qiyue, Xie, Zonghan, & School of Engineering, Edith Cowan University, WA 6027. Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering. United States. https://doi.org/10.1016/J.MATERRESBULL.2015.03.072
Fang, Feng, Zhang, Yeyu, Wu, Xiaoqin, Shao, Qiyue, Xie, Zonghan, and School of Engineering, Edith Cowan University, WA 6027. 2015. "Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering". United States. https://doi.org/10.1016/J.MATERRESBULL.2015.03.072.
@article{osti_22475851,
title = {Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering},
author = {Fang, Feng and Zhang, Yeyu and Wu, Xiaoqin and Shao, Qiyue and Xie, Zonghan and School of Engineering, Edith Cowan University, WA 6027},
abstractNote = {Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.},
doi = {10.1016/J.MATERRESBULL.2015.03.072},
url = {https://www.osti.gov/biblio/22475851}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 68,
place = {United States},
year = {Sat Aug 15 00:00:00 EDT 2015},
month = {Sat Aug 15 00:00:00 EDT 2015}
}