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Title: Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using a shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.
Authors:
 [1] ;  [2] ;  [3] ;  [1]
  1. Department of Physics, Federal University of Sergipe, São Cristóvão 49100-000 (Brazil)
  2. (United States)
  3. Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260 (United States)
Publication Date:
OSTI Identifier:
22475798
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 66; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COBALT ADDITIONS; DOPED MATERIALS; ELECTRICAL PROPERTIES; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES