Ablation of (GeS{sub 2}){sub 0.3}(Sb{sub 2}S{sub 3}){sub 0.7} glass with an ultra-violet nano-second laser
- University of Pardubice, Faculty of Chemical Technology, Institute of Environmental and Chemical Engineering, Studentska 573, 532 10 Pardubice (Czech Republic)
- Institute of Macromolecular Chemistry, AS CR, Heyrovskeho sq. 2, 162 06 Prague (Czech Republic)
Highlights: • The interaction of (GeS{sub 2}){sub 0.3}(Sb{sub 2}S{sub 3}){sub 0.7} bulk glass and film with UV nanosecond laser. • Ablation process, topography of crater and structure of the material were studied. • Ablation threshold fluencies changed with the spot diameter and number of pulses. • The photo-thermal expansion of the material occurred for low laser fluency. • Laser direct writing process applicable for fabrication of passive optical elements. - Abstract: The results of an experimental study of the laser ablation of bulk and thin films of a GeSbS chalcogenide glass using UV nanosecond pulses are reported. The response of the samples to illumination conditions was studied through the use of atomic force spectroscopy, digital holographic microscopy, Raman scattering and scanning electron microscopy. The multi-pulse ablation thresholds were determined for both the bulk and thin film samples for varying number of pulses and illuminated spot diameter. The possible application of direct laser writing into the bulk and thin films of this material is presented.
- OSTI ID:
- 22475714
- Journal Information:
- Materials Research Bulletin, Vol. 64; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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