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Title: High performance dye-sensitized solar cells using graphene modified fluorine-doped tin oxide glass by Langmuir–Blodgett technique

Journal Article · · Journal of Solid State Chemistry
 [1]; ;  [1];  [2]
  1. Rare Metals Research Center, Korea Institute of Geoscience and Mineral Resources, Daejeon 305-350 (Korea, Republic of)
  2. Department of Organic and Nano Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

Since the introduction of dye-sensitized solar cells (DSSCs) with low fabrication cost and high power conversion efficiency, extensive studies have been carried out to improve the charge transfer rate and performance of DSSCs. In this paper, we present DSSCs that use surface modified fluorine-doped tin oxide (FTO) substrates with reduced graphene oxide (r-GO) sheets prepared using the Langmuir–Blodgett (LB) technique to decrease the charge recombination at the TiO{sub 2}/FTO interface. R-GO sheets were excellently attached on FTO surface without physical deformations such as wrinkles; effects of the surface coverage of r-GO on the DSSC performance were also investigated. By using graphene modified FTO substrates, the resistance at the interface of TiO{sub 2}/FTO was reduced and the power conversion efficiency was increased to 8.44%. - Graphical abstract: DSSCs with graphene modified FTO glass were fabricated with the Langmuir Blodgett technique. GO sheets were transferred to FTO at various surface pressures in order to change the surface density of graphene and the highest power conversion efficiency of the DSSC was 8.44%. - Highlights: • By LB technique, r-GO sheets were coated on FTO without physical deformation. • DSSCs were fabricated with, r-GO modified FTO substrates. • With surface modification by r-GO, the interface resistance of DSSC decreased. • Maximum PCE of the DSSC was increased up to 8.44%.

OSTI ID:
22475559
Journal Information:
Journal of Solid State Chemistry, Vol. 224; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
Country of Publication:
United States
Language:
English