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Title: Structural and phase transformation of A{sup III}B{sup V}(100) semiconductor surface in interaction with selenium

Surfaces of GaAs(100), InAs(100), and GaP(100) substrates thermally treated in selenium vapor have been investigated by transmission electron microscopy and electron probe X-ray microanalysis. Some specific features and regularities of the formation of A{sub 3}{sup III}B{sub 4}{sup VI} (100)c(2 × 2) surface phases and thin layers of gallium or indium selenides A{sub 2}{sup III}B{sub 3}{sup VI} (100) on surfaces of different A{sup III}B{sup V}(100) semiconductors are discussed within the vacancy model of surface atomic structure.
Authors:
 [1] ; ;  [2]
  1. Voronezh State University of Engineering Technologies (Russian Federation)
  2. Voronezh Institute of State Firefighting Service (Russian Federation)
Publication Date:
OSTI Identifier:
22472402
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 60; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON PROBES; GALLIUM; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM SELENIDES; MICROANALYSIS; PHASE TRANSFORMATIONS; SELENIUM; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; X RADIATION