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Title: Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well

A complex study of the influence of nanoscale InAs inserts with thicknesses from 1.7 to 3.0 nm introduced into In{sub 0.53}Ga{sub 0.47}As quantum wells (QWs) on the structural and electrical properties of In{sub 0.52}Al{sub 0.48}As/In{sup 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures with one-sided δ-Si-doping has been performed. The structural quality of a combined QW was investigated by transmission electron microscopy. A correlation between the electron mobility in QW with the thickness of InAs insert and the technology of its fabrication is established. Specific features of the InP(substrate)/InAlAs(buffer) interface are investigated by transmission electron microscopy and photoluminescence spectroscopy. A relationship between the energy positions of the peak in the photoluminescence spectra in the range of photon energies 1.24 eV < ħω < 1.38 eV, which is due to the electronic transitions at the InP/InAlAs interface, and the structural features revealed in the interface region is established. It is found that an additional QW is unintentionally formed at the InP/InAlAs interface; the parameters of this QW depend on the heterostructure growth technology.
Authors:
 [1] ;  [2] ;  [3] ; ; ;  [1] ; ;  [2]
  1. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
  2. National Research Centre “Kurchatov Institute” (Russian Federation)
  3. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
Publication Date:
OSTI Identifier:
22472331
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 59; Journal Issue: 6; Other Information: Copyright (c) 2014 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; CORRELATIONS; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; EV RANGE; FABRICATION; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; PHOTOLUMINESCENCE; QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY