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Title: Formation of a regular domain structure in TGS–TGS + Cr crystals with a profile impurity distribution

A complex investigation of TGS–TGS + Cr crystals with a profile impurity distribution of chromium ions Cr{sup 3+} has been carried out at the macrolevel (measurement of dielectric properties by the method of nematic liquid crystals) and microlevel (domain structure according to atomic force microscopy data). It is established that periodic doped layers are formed only in individual growth pyramids in the regions where the polarization vector has a nonzero component along the normal to the growth faces rather than throughout the entire crystal volume. The domain configuration at the boundary of growth layers with different impurity compositions has been studied by piezoelectric force microscopy. The static unipolarity of layers with and without chromium impurity is approximately identical, whereas the domain-wall density in doped regions is higher than that in undoped ones by a factor of about 7.
Authors:
; ; ;  [1] ;  [2] ; ;  [3]
  1. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
  2. Vitebsk State University (Belarus)
  3. Belarussian Academy of Sciences, Institute of Technical Acoustics (Belarus)
Publication Date:
OSTI Identifier:
22472237
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 60; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CHROMIUM; CHROMIUM IONS; DENSITY; DIELECTRIC PROPERTIES; DOMAIN STRUCTURE; DOPED MATERIALS; LAYERS; LIQUID CRYSTALS; PIEZOELECTRICITY; POLARIZATION