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Title: Investigation of local tunneling current noise spectra on the silicon crystal surfaces by means of STM/STS

We report on a careful analysis of the local tunneling conductivity by means of ultra-high vacuum scanning tunneling microscopy/spectroscopy (STM/STS) technique in the vicinity of low-dimensional structures on the Si(111)–(7 × 7) and Si(110)–(16 × 2) surfaces. The power-law exponent α of low-frequency tunneling current noise spectra is investigated for different values of the tunneling contact parameters: relaxation rates, the localized state coupling, and the tunneling barrier width and height.
Authors:
;  [1] ;  [2]
  1. Moscow State University, Department of Physics (Russian Federation)
  2. Chinese Academy of Sciences, Wuhan Institute of Physics and Mathematics (China)
Publication Date:
OSTI Identifier:
22472129
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 121; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; CRYSTALS; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; NOISE; RELAXATION; SCANNING TUNNELING MICROSCOPY; SILICON; SPECTROSCOPY; SURFACES; TUNNEL EFFECT