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Title: Dependence of the permittivity of direct gap semiconductors on hydrostatic pressure

The pressure dependence of permittivity χ of direct gap ZnO, CdTe, InSb, InAs, CdSnAs{sub 2}, and CdGeAs{sub 2} semiconductors in the hydrostatic pressure range from zero to 1 GPa is determined from the results of quantitative analysis of the pressure dependences of resistivity ρ(P) and Hall constant R{sub H}(P). It is found that the dielectric constant decreases upon an increase in pressure so that coefficient (dχ/d{sub P})/χ increases with (dE{sub g}/dP)/E{sub g}.
Authors:
; ;  [1]
  1. Russian Academy of Sciences, Amirkhanov Institute of Physics, Dagestan Research Center (Russian Federation)
Publication Date:
OSTI Identifier:
22472128
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 121; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM TELLURIDES; ELECTRIC CONDUCTIVITY; ENERGY GAP; GERMANIUM ARSENIDES; HALL EFFECT; INDIUM ANTIMONIDES; INDIUM ARSENIDES; PERMITTIVITY; PRESSURE DEPENDENCE; SEMICONDUCTOR MATERIALS; TIN ARSENIDES; ZINC OXIDES