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Title: Kinetics of vertical transport and localization of electrons in strained semiconductor supperlattices

The kinetics of vertical electron transport in a semiconductor superlattice is considered taking into account partial localization of electrons. The time dependences of photoemission currents from samples based on a strained semiconductor superlattice calculated by numerically solving the kinetic equation are in good agreement with experimental data. Comparison of the theory with experiment makes it possible to determine the characteristic electron localization and thermoactivation times, the diffusion length, and losses of photoelectrons in the superlattice.
Authors:
; ;  [1]
  1. St. Petersburg State Technical University (Russian Federation)
Publication Date:
OSTI Identifier:
22472123
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 121; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; DIFFUSION LENGTH; ELECTRONS; KINETIC EQUATIONS; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; STRAINS; SUPERLATTICES; TIME DEPENDENCE