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Title: Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

We investigate the structural and optical properties of GeO/SiO{sub 2} multilayers obtained by evaporation of GeO{sub 2} and SiO{sub 2} powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after postgrowth annealing at 800°C. High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500–1600 nm. The temperature dependence of the photoluminescence is studied.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
  2. Université de Lorraine, Institut Jean Lamour UMR CNRS 7198 (France)
Publication Date:
OSTI Identifier:
22471935
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 121; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; EVAPORATION; GERMANATES; GERMANIUM; GERMANIUM OXIDES; GERMANIUM SILICIDES; LAYERS; MATRIX MATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POWDERS; SILICATES; SILICON OXIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY