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Title: Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs{sub x}P{sub 1−x} layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ; ;  [1]
  1. Nizhni Novgorod Lobachevsky State University (Russian Federation)
  2. Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22470146
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELASTICITY; GALLIUM ARSENIDES; IMPURITIES; INDIUM; INDIUM ARSENIDES; LAYERS; MATRIX MATERIALS; PHASE STUDIES; PHOSPHORUS; QUANTUM DOTS; STRAINS