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Title: Optical lattices of excitons in InGaN/GaN quantum well systems

Abstract

Optical lattices of excitons in periodic systems of InGaN quantum wells with GaN barriers are designed, implemented, and investigated. Due to the collective interaction of quasi-two-dimensional excitons with light and a fairly high binding energy of excitons in GaN, optical Bragg reflection at room temperature is significantly enhanced. To increase the resonance optical response of the system, new structures with two quantum wells in a periodic supercell are designed and implemented. Resonance reflection of 40% at room temperatures for structures with 60 periods is demonstrated.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22470145
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; BINDING ENERGY; BRAGG REFLECTION; EXCITONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; PERIODICITY; QUANTUM WELLS; RESONANCE; TEMPERATURE RANGE 0273-0400 K; TWO-DIMENSIONAL SYSTEMS; VISIBLE RADIATION

Citation Formats

Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru, Bolshakov, A. S., E-mail: bolsh-as@mail.ioffe.ru, Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsulnikov, A. F., and Yagovkina, M. A. Optical lattices of excitons in InGaN/GaN quantum well systems. United States: N. p., 2015. Web. doi:10.1134/S1063782615010042.
Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru, Bolshakov, A. S., E-mail: bolsh-as@mail.ioffe.ru, Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsulnikov, A. F., & Yagovkina, M. A. Optical lattices of excitons in InGaN/GaN quantum well systems. United States. https://doi.org/10.1134/S1063782615010042
Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru, Bolshakov, A. S., E-mail: bolsh-as@mail.ioffe.ru, Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsulnikov, A. F., and Yagovkina, M. A. 2015. "Optical lattices of excitons in InGaN/GaN quantum well systems". United States. https://doi.org/10.1134/S1063782615010042.
@article{osti_22470145,
title = {Optical lattices of excitons in InGaN/GaN quantum well systems},
author = {Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru and Bolshakov, A. S., E-mail: bolsh-as@mail.ioffe.ru and Zavarin, E. E. and Sakharov, A. V. and Lundin, V. V. and Tsatsulnikov, A. F. and Yagovkina, M. A.},
abstractNote = {Optical lattices of excitons in periodic systems of InGaN quantum wells with GaN barriers are designed, implemented, and investigated. Due to the collective interaction of quasi-two-dimensional excitons with light and a fairly high binding energy of excitons in GaN, optical Bragg reflection at room temperature is significantly enhanced. To increase the resonance optical response of the system, new structures with two quantum wells in a periodic supercell are designed and implemented. Resonance reflection of 40% at room temperatures for structures with 60 periods is demonstrated.},
doi = {10.1134/S1063782615010042},
url = {https://www.osti.gov/biblio/22470145}, journal = {Semiconductors},
issn = {1063-7826},
number = 1,
volume = 49,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}