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Title: Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

Radiation in the terahertz (THz) spectral range from structures with GaAs/AlGaAs doped quantum wells is investigated under conditions of the interband optical excitation of electron-hole pairs in n-type structures and impurity breakdown in a longitudinal electric field in p-type structures. The emission spectra are obtained. Emission is observed at low temperatures and shown to be determined by optical transitions between impurity states and transitions between the band and impurity states. Upon optical interband pumping, the impurity states are depopulated due to the recombination of electron-hole pairs with the involvement of impurities, while, in an electric field, the impurity states are depopulated due to impact ionization.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. St. Petersburg State Polytechnical University (Russian Federation)
  2. Russian Academy of Sciences, Institute of Physics of Microstructures (Russian Federation)
  3. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22470140
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; BREAKDOWN; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRICAL PUMPING; ELECTRONS; EMISSION; EMISSION SPECTRA; EXCITATION; GALLIUM ARSENIDES; HOLES; IMPURITIES; IONIZATION; N-TYPE CONDUCTORS; OPTICAL PUMPING; QUANTUM WELLS; RECOMBINATION; TEMPERATURE RANGE 0065-0273 K; THZ RANGE