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Title: Energy spectrum and transport in narrow HgTe quantum wells

The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ; ;  [3]
  1. Ural Federal University, Institute of Natural Sciences (Russian Federation)
  2. Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
  3. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22470138
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; CONFINEMENT; ENERGY SPECTRA; ENERGY TRANSFER; HOLES; MERCURY TELLURIDES; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TWO-DIMENSIONAL SYSTEMS