Energy spectrum and transport in narrow HgTe quantum wells
- Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
- Ural Federal University, Institute of Natural Sciences (Russian Federation)
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.
- OSTI ID:
- 22470138
- Journal Information:
- Semiconductors, Vol. 49, Issue 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport
Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers
Zeeman Splitting of Electron Spectrum in HgTe Quantum Wells Near the Dirac Point
Journal Article
·
Sun Dec 15 00:00:00 EST 2013
· Semiconductors
·
OSTI ID:22470138
+2 more
Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers
Journal Article
·
Mon Jul 15 00:00:00 EDT 2019
· Semiconductors (Woodbury, N.Y., Print)
·
OSTI ID:22470138
+2 more
Zeeman Splitting of Electron Spectrum in HgTe Quantum Wells Near the Dirac Point
Journal Article
·
Sun Apr 15 00:00:00 EDT 2018
· Semiconductors
·
OSTI ID:22470138
+2 more