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Title: Dipolar excitons indirect in real and momentum space in a GaAs/AlAs heterostructure

For a Schottky-diode structure containing two narrow GaAs (3.5 nm) and AlAs (5 nm) heterolayers, the photoluminescence properties of long-living dipolar excitons, indirect in both real and momentum space, are studied in perpendicular magnetic fields in the Faraday configuration of measurements. With an external perpendicular electric field, the lifetimes of such excitons can be extended to ∼1 μs. Nevertheless the exciton spin subsystem remains nonequilibrium: the exciton spin-relaxation time is even longer. The degree of circular polarization of the photoluminescence attains 80% in a field of 6 T. With an electric field, it is possible to control the degree and sign of the circular polarization.
Authors:
;  [1]
  1. Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22470137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRIC FIELDS; EXCITONS; FARADAY METHOD; GALLIUM ARSENIDES; LIFETIME; MAGNETIC FIELDS; PHOTOLUMINESCENCE; POLARIZATION; RELAXATION TIME; SCHOTTKY BARRIER DIODES; SPACE; SPIN