skip to main content

Title: Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation

The transport of electrons in heterobipolar transistors with radiation defects is studied under conditions where the characteristic sizes of defect clusters and the distances between them can be comparable or can even exceed the sizes of the device base. It is shown that, under some levels of irradiation, neutron radiation can bring about a decrease in the time of flight of hot electrons through the base, which retards the degradation of the transistor parameters.
Authors:
; ;  [1]
  1. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22470134
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; ELECTRONS; IRRADIATION; NEUTRON FLUENCE; NEUTRONS; RADIATION EFFECTS; TIME-OF-FLIGHT METHOD; TRANSISTORS