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Title: Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

The specific features of how nitride HEMT heterostructures are produced by NH{sub 3} and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10{sup 8}−1 × 10{sup 9} cm{sup −2}. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH{sub 3}-MBE with an extremely high ammonia flux are demonstrated.
Authors:
 [1] ;  [2] ;  [1] ; ;  [2] ;  [3]
  1. NTO ZAO (Russian Federation)
  2. Svetlana-Rost ZAO (Russian Federation)
  3. St. Petersburg State Polytechnic University (Russian Federation)
Publication Date:
OSTI Identifier:
22470131
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; AMMONIA; BUFFERS; DECOMPOSITION; DISLOCATIONS; EFFICIENCY; FABRICATION; GALLIUM NITRIDES; HETEROJUNCTIONS; LAYERS; MOLECULAR BEAM EPITAXY; PLASMA; TEMPERATURE DEPENDENCE