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Title: Epitaxial growth of hexagonal silicon polytypes on sapphire

The formation of a single-crystal silicon polytype is observed in silicon-on-sapphire structures by high-resolution transmission electron microscopy. The appearance of inclusions with a structure different from that of diamond is attributed to the formation of strong-twinning regions and the aggregation of stacking faults, which form their own crystal structure in the crystal lattice of silicon. It is demonstrated that the given modification belongs to the 9R silicon polytype.
Authors:
; ; ;  [1]
  1. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22470130
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AGGLOMERATION; CRYSTAL LATTICES; DIAMONDS; EPITAXY; MONOCRYSTALS; SAPPHIRE; SILICON; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING