Epitaxial growth of hexagonal silicon polytypes on sapphire
- Lobachevsky State University of Nizhni Novgorod (Russian Federation)
The formation of a single-crystal silicon polytype is observed in silicon-on-sapphire structures by high-resolution transmission electron microscopy. The appearance of inclusions with a structure different from that of diamond is attributed to the formation of strong-twinning regions and the aggregation of stacking faults, which form their own crystal structure in the crystal lattice of silicon. It is demonstrated that the given modification belongs to the 9R silicon polytype.
- OSTI ID:
- 22470130
- Journal Information:
- Semiconductors, Vol. 49, Issue 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Polytype distribution of circumstellar silicon carbide : microstructural characterization by transmission electron microscopy.
Extensively Microtwinned Diamond with Nanolaminates of Lonsdaleite Formed by Flash Laser Heating of Glassy Carbon
InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
Journal Article
·
Mon Dec 01 00:00:00 EST 2003
· Geochim. Cosmochim. Acta
·
OSTI ID:22470130
+3 more
Extensively Microtwinned Diamond with Nanolaminates of Lonsdaleite Formed by Flash Laser Heating of Glassy Carbon
Journal Article
·
Thu Nov 02 00:00:00 EDT 2023
· Nano Letters
·
OSTI ID:22470130
+7 more
InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
Journal Article
·
Mon Oct 03 00:00:00 EDT 2011
· Nano Letters
·
OSTI ID:22470130
+6 more