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Title: Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

The possibility of using the laser deposition method to grow crystalline light-emitting structures with GaAsSb/GaAs quantum wells (QWs) is experimentally demonstrated for the first time. The growth temperature of the GaAs{sub 1−x}Sb{sub x} layers is varied within the range 450–550°C; according to X-ray diffraction analyses, the content of antimony reaches x{sub Sb} ≈ 0.37 at a growth temperature of 450°C. Low-temperature (4 K) photoluminescence spectroscopy demonstrates the presence of a peak associated with the GaAsSb/GaAs QW at around 1.3 μm at the minimum laser-light pumping level. The optimal growth temperature T{sub g} = 500°C and arsine flow rate P{sub A} = 2.2 × 10{sup −8} mol/s at which the best emission properties of QWs with x{sub Sb} ∼ 0.17–0.25 are observed at temperatures of 77 and 300 K are determined. It is shown that GaAsSb/GaAs QWs with similar parameters (width and composition) grown by laser deposition at 500°C and metal-organic vapor-phase epitaxy at 580°C have comparable optical quality.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation)
  2. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
  3. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22470127
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANTIMONY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DEPOSITION; EMISSION SPECTROSCOPY; FLOW RATE; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; LASER RADIATION; LAYERS; OPTICAL PROPERTIES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; TEMPERATURE DEPENDENCE; VAPOR PHASE EPITAXY; VISIBLE RADIATION; X-RAY DIFFRACTION