skip to main content

Title: Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling

Experimental investigation of the time dependence of impurity photoconductivity in n-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.
Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22470126
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON COOLING; EXCITATION; GALLIUM ARSENIDES; IMPURITIES; N-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; TIME DEPENDENCE