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Title: Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell

The results of complex analysis of the parameters of the GaAs/AlGaAs semiconductor superlattice with a complex unit cell using mathematical modeling and experimental methods of transmission electron microscopy, energy-dispersive analysis, and spectroscopy of photoluminescence and photocurrent are presented. Suppression of the intraband static negative differential conductivity under strong interaction conditions between minibands and the inharmonic electron-dispersion law is shown.
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Russian Academy of Sciences, Institute of Physics of Microstructures (Russian Federation)
  2. Nizhni Novgorod State University, Physical Technical Research Institute (Russian Federation)
  3. Nizhni Novgorod State University (Russian Federation)
Publication Date:
OSTI Identifier:
22470125
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; DISPERSIONS; ELECTRONS; EMISSION SPECTROSCOPY; GALLIUM ARSENIDES; MATHEMATICAL MODELS; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY