skip to main content

Title: Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures

The photosensitivity, photoluminescence, and electroluminescence spectra of InGaAs/GaAs diode nanoheterostructures with a Si δ layer formed at a distance of 10 nm from the InGaAs quantum well are studied. The influence of the arrangement of the δ layer with respect to the quantum well on the optoelectronic properties of the structures is established.
Authors:
; ;  [1] ;  [2] ; ;  [1] ;  [2]
  1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
  2. Nizhni Novgorod State University, Physical Technical Research Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22470085
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTROLUMINESCENCE; EMISSION SPECTRA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; PHOTOLUMINESCENCE; PHOTOSENSITIVITY; QUANTUM WELLS; SILICON