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Title: Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

Data on the temperature dependence of the cathodoluminescence intensity in multiple InGaN/GaN quantum-well structures in the temperature range 80–300 K are reported. Unirradiated structures and structures irradiated with electrons with subthreshold energy are studied. It is shown that, upon irradiation, the temperature dependence becomes weaker. From analysis of the results obtained in this study and previously, it can be suggested that electron irradiation initiates the relaxation of strains produced in quantum wells due to the InGaN-GaN lattice mismatch.
Authors:
;  [1]
  1. Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)
Publication Date:
OSTI Identifier:
22470084
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; IRRADIATION; OPTICAL PROPERTIES; QUANTUM WELLS; RELAXATION; STRAINS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K