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Title: Molecular beam epitaxy of III-P{sub x}As{sub 1−x} solid solutions: Mechanism of composition formation in the sublattice of a group V element

The effect of substrate temperature, As{sub 2} and P{sub 2} molecular flux densities, and growth rate on the composition of III-P{sub x}As{sub 1−x} solid solution layers prepared by molecular beam epitaxy is experimentally investigated. Experimental data in a wide range of growth conditions are analyzed. The results obtained are presented in the form of a kinetic model for describing the process of formation of the composition in the Group V sublattice of the III-P{sub x}As{sub 1−x} solid solution upon molecular beam epitaxy. The model can be used for choosing the growth conditions of the III-P{sub x}As{sub 1−x} (001) solid-solution layers of a specified composition.
Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22470081
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ARSENIC; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTAL LATTICES; FLUX DENSITY; LAYERS; MOLECULAR BEAM EPITAXY; PHOSPHIDES; PHOSPHORUS; RARE EARTH COMPOUNDS; SOLID SOLUTIONS; SUBSTRATES; TEMPERATURE DEPENDENCE; X-RAY SPECTROSCOPY