skip to main content

Title: An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22470079
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; GERMANIUM; LASER RADIATION; LAYERS; LIGHT EMITTING DIODES; QUANTUM WELLS; SPUTTERING