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Title: Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells

The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n-InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electron-electron interaction effects.
Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22470077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC CONDUCTIVITY; ELECTRON-ELECTRON COUPLING; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; HYPOTHESIS; ILLUMINANCE; INDIUM ARSENIDES; INFRARED RADIATION; MAGNETIC FIELDS; N-TYPE CONDUCTORS; QUANTUM WELLS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K