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Title: Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B

A theoretical model developed for interpretation of the results of measurements of the impurity-photoconductivity relaxation in p-Si:B under pulsed optical excitation by a narrow-band tunable source of radiation in “heating” (10–500 V/cm) electric fields is presented. The model takes into account the capture of holes at the ground and lower excited states of boron with optical-phonon emission. It is shown that the dependence of the photoconductivity-relaxation time on the electric-field intensity can be unsteady taking into account these processes.
Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22470076
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; CAPTURE; ELECTRIC FIELDS; EXCITATION; EXCITED STATES; HEATING; HOLES; PHONONS; PHOTOCONDUCTIVITY; P-TYPE CONDUCTORS; RELAXATION TIME; SILICON