Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

Journal Article · Sun Feb 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615020104· OSTI ID:22470071

Zhuravlev, K. S.; Bakarov, A. K.; Toropov, A. I. ^[1]

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1. Russian Academy of Sciences, Institute for Semiconductor Physics, Siberian Branch (Russian Federation)

The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.

• OSTI ID: 22470071
• Journal Information: Semiconductors, Vol. 49, Issue 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
DOPED MATERIALS
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
EMISSION SPECTRA
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LAYERS
PHOTOLUMINESCENCE
QUANTUM WELLS
TRANSISTORS