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Title: Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.
Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Institute for Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22470071
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; EMISSION SPECTRA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; PHOTOLUMINESCENCE; QUANTUM WELLS; TRANSISTORS