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Title: Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well

The specific features of the photoluminescence and the electrical properties of doped nanoheterostructures containing a composite InAlAs/InGaAs/InAlAs quantum well with a thin InAs insert in the middle are studied. The insert thickness is varied in the range from 1.7 to 3.0 nm. It is established that the position of the peaks in the photoluminescence spectra in the photon energy range 0.6–0.8 eV correlates with the InAs insert thickness. Simulation of the band structure shows that the experimentally observed variation in the energy of optical transitions is associated with lowering of the energy of electron and hole states in the quantum well with increasing insert thickness. In the photon energy range 1.24–1.38 eV, optical transitions in the region of the InAlAs buffer-InP substrate interface are observed. The signal photon energy and intensity depend on the features of the formation of this heterointerface and on the conditions of substrate annealing. It is conceived that this is due to the formation of a transition region between the InAlAs buffer and the substrate.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)
  2. National Research Nuclear University “MEPhI“ (Russian Federation)
Publication Date:
OSTI Identifier:
22470069
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ANNEALING; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; EMISSION SPECTRA; EV RANGE; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; PHOTOLUMINESCENCE; PHOTONS; QUANTUM WELLS; SIMULATION; SUBSTRATES