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Title: Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

A significant (by up to a factor of 7) increase in the internal quantum efficiency of luminescence is achieved at room temperature in semiconductor-metal-insulator hybrid structures fabricated by the successive deposition of gold and Si{sub 3}N{sub 4} over an array of InGaN nanoblocks, grown by molecular-beam epitaxy. The observed effect can be accounted for by the resonant interaction of excitons localized in InGaN nanoblocks with localized surface-plasmon modes in gold intrusions embedded into InGaN and Si{sub 3}N{sub 4}.
Authors:
; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22470068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; DEPOSITION; EXCITONS; GALLIUM NITRIDES; GOLD; INDIUM COMPOUNDS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NANOCOMPOSITES; PLASMONS; PLUTONIC ROCKS; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SURFACES; TEMPERATURE RANGE 0273-0400 K; WATER INFLUX