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Title: Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors

DC performance of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors (DCFETs) is demonstrated and compared by two-dimensional simulated analysis. As compared with the traditional InP/InGaAs DCFET, the GaAsSb/InGaAs DCFET exhibits a higher drain current of 8.05 mA, a higher transconductance of 216.24 mS/mm, and a lower gate turn-on voltage of 0.25 V for the presence of a relatively large conduction band discontinuity (ΔE{sub c} ≈ 0.4 eV) at GaAsSb/InGaAs heterostructure and the formation of two-dimensional electron gas in the n{sup +}-InGaAs doping channel. However, due to the tunneling effect under large gate-to-source bias, it results in considerably large gate leakage current in the GaAsSb/InGaAs DCFET.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [1]
  1. National University of Kaohsiung, Department of Electrical Engineering (China)
  2. National Kaohsiung Normal University, Department of Electronic Engineering (China)
Publication Date:
OSTI Identifier:
22470067
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON GAS; EV RANGE; FIELD EFFECT TRANSISTORS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LEAKAGE CURRENT; TUNNEL EFFECT; TWO-DIMENSIONAL SYSTEMS