Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors
- National University of Kaohsiung, Department of Electrical Engineering (China)
- National Kaohsiung Normal University, Department of Electronic Engineering (China)
DC performance of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors (DCFETs) is demonstrated and compared by two-dimensional simulated analysis. As compared with the traditional InP/InGaAs DCFET, the GaAsSb/InGaAs DCFET exhibits a higher drain current of 8.05 mA, a higher transconductance of 216.24 mS/mm, and a lower gate turn-on voltage of 0.25 V for the presence of a relatively large conduction band discontinuity (ΔE{sub c} ≈ 0.4 eV) at GaAsSb/InGaAs heterostructure and the formation of two-dimensional electron gas in the n{sup +}-InGaAs doping channel. However, due to the tunneling effect under large gate-to-source bias, it results in considerably large gate leakage current in the GaAsSb/InGaAs DCFET.
- OSTI ID:
- 22470067
- Journal Information:
- Semiconductors, Vol. 49, Issue 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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