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Title: Adaptation of the model of tunneling in a metal/CaF{sub 2}/Si(111) system for use in industrial simulators of MIS devices

An approach toward simplification of the model of the tunneling transport of electrons through a thin layer of crystalline calcium fluoride into a silicon (111) substrate with subsequent implementation in simulators of semiconductor devices is suggested. The validity of the approach is proven by comparing the results of modeling using simplified formulas with the results of precise calculations and experimental data. The approach can be applied to calculations of tunneling currents in structures with any crystalline insulators on Si (111)
Authors:
; ;  [1] ;  [2]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  2. Institute for Microelectronics, TU Vienna (Austria)
Publication Date:
OSTI Identifier:
22470066
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CALCIUM FLUORIDES; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; ELECTRIC CURRENTS; ELECTRONS; SEMICONDUCTOR DEVICES; SILICON; SIMULATION; SIMULATORS; SUBSTRATES; THIN FILMS; TUNNEL EFFECT