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Title: Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

Abstract

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)
Publication Date:
OSTI Identifier:
22470063
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CONTROL; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ENRICHMENT; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURES; NITROGEN; PLASMA; SILICON; SUBSTRATES; SURFACES

Citation Formats

Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru, Kladko, P. N., Nikitina, E. V., and Egorov, A. Yu. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates. United States: N. p., 2015. Web. doi:10.1134/S1063782615020177.
Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru, Kladko, P. N., Nikitina, E. V., & Egorov, A. Yu. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates. United States. https://doi.org/10.1134/S1063782615020177
Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru, Kladko, P. N., Nikitina, E. V., and Egorov, A. Yu. 2015. "Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates". United States. https://doi.org/10.1134/S1063782615020177.
@article{osti_22470063,
title = {Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates},
author = {Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru and Kladko, P. N. and Nikitina, E. V. and Egorov, A. Yu.},
abstractNote = {The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.},
doi = {10.1134/S1063782615020177},
url = {https://www.osti.gov/biblio/22470063}, journal = {Semiconductors},
issn = {1063-7826},
number = 2,
volume = 49,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}