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Title: Positronics of radiation-induced effects in chalcogenide glassy semiconductors

Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4]
  1. Scientific Research Company “Carat” (Ukraine)
  2. Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation)
  3. Opole Technical University (Poland)
  4. Opole University (Poland)
Publication Date:
OSTI Identifier:
22470055
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ABSORPTION SPECTROSCOPY; AGING; ANNIHILATION; ARSENIC SULFIDES; CRYSTAL DEFECTS; DOPPLER BROADENING; GAMMA SPECTROSCOPY; GLASS; LIFETIME; POSITRONS; SEMICONDUCTOR MATERIALS