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Title: Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film

Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd{sub x}Hg{sub 1−x}Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.
Authors:
;  [1]
  1. Tomsk State University (Russian Federation)
Publication Date:
OSTI Identifier:
22470053
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; CONCENTRATION RATIO; CRYSTAL DEFECTS; FILMS; MERCURY TELLURIDES; MODIFICATIONS; MOLECULAR BEAM EPITAXY; SOLID SOLUTIONS; SURFACE POTENTIAL; VARIATIONS