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Title: On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystals

Scanning atomic-force and electron microscopies are used to study the self-organization kinetics of nanoscale domains upon the deposition of submonolayer carbon coatings on silicon (100) in the microwave plasma of low-pressure ethanol vapor. Model mechanisms of how silicon-carbon domains are formed are suggested. The mechanisms are based on Langmuir’s model of adsorption from the precursor state and modern concepts of modification of the equilibrium structure of the upper atomic layer in crystalline semiconductors under the influence of external action.
Authors:
 [1]
  1. Russian Academy of Sciences, Saratov Branch, Kotel’nikov Institute of Radio Engineering and Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22470051
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; CARBON; COATINGS; CRYSTAL STRUCTURE; CRYSTALS; DEPOSITION; ELECTRON MICROSCOPY; ETHANOL; LAYERS; MICROWAVE RADIATION; NANOSTRUCTURES; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; VAPORS