Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy

Journal Article · Sun Mar 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615030148· OSTI ID:22470045

Mynbaev, K. D.; Bazhenov, N. L. ^[1]; Izhnin, A. I.; Izhnin, I. I. ^[2]; Mikhailov, N. N.; Varavin, V. S.; Dvoretsky, S. A. ^[3]

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1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
2. R&D Institute for Materials SRC Carat (Ukraine)
3. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.

• OSTI ID: 22470045
• Journal Information: Semiconductors, Vol. 49, Issue 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM COMPOUNDS
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
FILMS
GALLIUM ARSENIDES
MERCURY
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SILICON
SUBSTRATES
SYNTHESIS
VACANCIES