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Title: Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions

It is found that the implantation of silicon with oxygen ions and subsequent annealing at high temperatures are accompanied by the formation of electrically active donor centers and by the p-n conversion of the conductivity of silicon. The concentration and spatial distribution of these centers depend on the annealing temperature. The results are accounted for by the interaction of oxygen atoms with intrinsic point defects formed upon the annealing of implantation damages.
Authors:
;  [1] ;  [2] ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  2. St. Petersburg Electrotechnical University LETI (Russian Federation)
Publication Date:
OSTI Identifier:
22470040
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; N-TYPE CONDUCTORS; OXYGEN; OXYGEN IONS; POINT DEFECTS; P-TYPE CONDUCTORS; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; VISIBLE RADIATION