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Title: Formation of Si nanocrystals in multilayered nanoperiodic Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/.../Si(100) structures: Synchrotron and photoluminescence data

The results of X-ray absorption near-edge structure spectroscopy data obtained with synchrotron radiation for multilayered nanoperiodic Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/.../Si(100) structures annealed at temperatures of 500–1100°C are reported. The data show that, upon high-temperature annealing (∼1100°C), the structures are modified. The modification is attributed to the formation of Si nanocrystals in deep layers of the structures. At the same time, the structures exhibit size-dependent high-intensity photoluminescence in the photon-energy range 1.4–1.52 eV.
Authors:
; ; ; ; ;  [1] ; ; ; ;  [2] ;  [1]
  1. Voronezh State University (Russian Federation)
  2. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22470039
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ABSORPTION SPECTROSCOPY; ALUMINIUM OXIDES; ANNEALING; EV RANGE; HETEROJUNCTIONS; LAYERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; PHOTONS; SILICON; SILICON OXIDES; SYNCHROTRON RADIATION; X-RAY SPECTROSCOPY