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Title: Electrooptical properties and structural features of amorphous ITO

Thin indium-tin oxide (ITO) films are deposited onto cold substrates by magnetron-assisted sputtering. The dependences of the structural, electrical, and optical properties of the films on the oxygen content in the atmosphere of sputtering and the growth rate are studied. It is shown that, if the substrate temperature is no higher than the ITO crystallization temperature and the conditions of growth deviate from the optimal relationship between the oxygen pressure and the growth rate, the resistance of the layers can be six or seven orders of magnitude higher than the resistance of conducting amorphous layers and reach hundreds of megaohms. At the same time, the optical properties of insulating layers in the visible spectral region are completely identical to the properties of the conducing amorphous modification. A conceptual model of defects responsible for the insulating properties of amorphous ITO is proposed.
Authors:
 [1]
  1. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (Russian Federation)
Publication Date:
OSTI Identifier:
22470038
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; CONCENTRATION RATIO; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; FILMS; INDIUM COMPOUNDS; LAYERS; MAGNETRONS; MODIFICATIONS; OPTICAL PROPERTIES; OXYGEN; PRESSURE DEPENDENCE; SUBSTRATES; TIN OXIDES