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Title: On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter

Reflection electron-energy loss spectra are obtained for a series of Si samples with different crystallographic orientations, prepared under different technological conditions. Using the experimental spectra, the electron energy loss dependences of the product of the mean inelastic free path and differential inelastic electron scattering cross section are calculated. A new technique is suggested for analyzing the spectra of inelastic electron scattering cross section by simulating experimental spectra with the use of the three-parameter Tougaard universal cross section functions. The results of the simulation are used to determine the nature of loss peaks and to calculate the surface parameter.
Authors:
;  [1] ;  [2] ; ; ;  [3]
  1. Reshetnev Siberian State Aerospace University (Russian Federation)
  2. Russian Academy of Sciences, Siberian branch, Institute of Chemistry and Chemical Technology (Russian Federation)
  3. Russian Academy of Sciences, Siberian branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22469991
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CROSS SECTIONS; ELECTRON SPECTRA; ELECTRONS; ENERGY LOSSES; ENERGY-LOSS SPECTROSCOPY; FINE STRUCTURE; INELASTIC SCATTERING; ORIENTATION; REFLECTION; SCATTERING; SILICON; SPECTRAL REFLECTANCE; SURFACES