On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter

Journal Article · Wed Apr 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S106378261504017X· OSTI ID:22469991

Igumenov, A. Yu. ^[1]; Mikhlin, Yu. L. ^[2]; Pchelyakov, O. P.; Nikiforov, A. I.; Timofeev, V. A. ^[3]

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1. Reshetnev Siberian State Aerospace University (Russian Federation)
2. Russian Academy of Sciences, Siberian branch, Institute of Chemistry and Chemical Technology (Russian Federation)
3. Russian Academy of Sciences, Siberian branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

Reflection electron-energy loss spectra are obtained for a series of Si samples with different crystallographic orientations, prepared under different technological conditions. Using the experimental spectra, the electron energy loss dependences of the product of the mean inelastic free path and differential inelastic electron scattering cross section are calculated. A new technique is suggested for analyzing the spectra of inelastic electron scattering cross section by simulating experimental spectra with the use of the three-parameter Tougaard universal cross section functions. The results of the simulation are used to determine the nature of loss peaks and to calculate the surface parameter.

• OSTI ID: 22469991
• Journal Information: Semiconductors, Vol. 49, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CROSS SECTIONS
ELECTRON SPECTRA
ELECTRONS
ENERGY LOSSES
ENERGY-LOSS SPECTROSCOPY
FINE STRUCTURE
INELASTIC SCATTERING
ORIENTATION
REFLECTION
SCATTERING
SILICON
SPECTRAL REFLECTANCE
SURFACES