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Title: Low-temperature conductivity in CuGaS{sub 2} single crystals

CuGaS{sub 2} single crystals are grown by the Bridgman-Stockbarger method. X-ray diffraction and Raman studies are performed. It is shown that the conductivity at low temperatures has an activation mechanism: in the range of 100–300 K, impurity conduction with an acceptor activation energy of 12 meV dominates; at temperatures below 100 K, Mott conductivity, i.e., so-called hopping conductivity with a variable hop length prevails. The density of localized states and the average carrier hop length are estimated.
Authors:
; ; ; ;  [1]
  1. National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)
Publication Date:
OSTI Identifier:
22469990
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CHARGE CARRIERS; COPPER COMPOUNDS; CRYSTAL GROWTH; DENSITY OF STATES; ELECTRIC CONDUCTIVITY; GALLIUM SULFIDES; MONOCRYSTALS; STOCKBARGER METHOD; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION