Low-temperature conductivity in CuGaS{sub 2} single crystals
- National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)
CuGaS{sub 2} single crystals are grown by the Bridgman-Stockbarger method. X-ray diffraction and Raman studies are performed. It is shown that the conductivity at low temperatures has an activation mechanism: in the range of 100–300 K, impurity conduction with an acceptor activation energy of 12 meV dominates; at temperatures below 100 K, Mott conductivity, i.e., so-called hopping conductivity with a variable hop length prevails. The density of localized states and the average carrier hop length are estimated.
- OSTI ID:
- 22469990
- Journal Information:
- Semiconductors, Vol. 49, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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