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Title: Temperature dependences of the contact resistivity in ohmic contacts to n{sup +}-InN

The temperature dependences of the contact resistivity (ρ{sub c}) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10{sup 18} cm{sup −3} in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly increasing dependences ρ{sub c}(T) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 10{sup 9} cm{sup −2}. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 10{sup 10} cm{sup −2}.
Authors:
;  [1] ;  [2] ; ; ;  [3] ;  [4] ; ; ; ; ; ;  [1]
  1. National Academy of Sciences, Lashkaryov Institute of Semiconductor Physics (Ukraine)
  2. “Orion” Research Institute (Ukraine)
  3. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  4. National Academy of Sciences of Ukraine, Paton Electric Welding Institute (Ukraine)
Publication Date:
OSTI Identifier:
22469985
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DENSITY; EDGE DISLOCATIONS; ELECTRIC CONDUCTIVITY; FASTENERS; GOLD; INDIUM NITRIDES; NITROGEN IONS; PALLADIUM; SCREW DISLOCATIONS; TEMPERATURE DEPENDENCE; TITANIUM; X-RAY DIFFRACTION