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Title: Photoluminescence of heterostructures with GaP{sub 1−x}N{sub x} and GaP{sub 1−x−y}N{sub x}As{sub y} layers grown on GaP and Si substrates by molecular-beam epitaxy

The structural and optical properties of heterostructures containing GaP{sub 1−x}N{sub x} ternary and GaP{sub 1−x−y}N{sub x}As{sub y} quaternary alloy layers are discussed. The heterostructures are grown by molecular-beam epitaxy on GaP and Si substrates. The structures are studied by the high-resolution X-ray diffraction technique and photoluminescence measurements in a wide temperature range from 10 to 300 K. In the low-temperature photoluminescence spectra of the alloys with a low nitrogen fraction (x < 0.007), two clearly resolved narrow lines attributed to the localized states of nitrogen pairs and the phonon replicas of these lines are observed.
Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, St. Petersburg Academic University (Russian Federation)
Publication Date:
OSTI Identifier:
22469983
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; CONCENTRATION RATIO; EMISSION SPECTRA; GALLIUM ARSENIDES; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; QUATERNARY ALLOY SYSTEMS; SILICON; SUBSTRATES; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY; YTTRIUM NITRIDES